SCOPUS 정보 검색 플랫폼

Journal of Physics and Chemistry of Solids

Volumn 72, Issue 12, 2011, Pages 1506-1514

Effects of ageing on the electrical characteristics of Cd/CdS/n-Si/AuSb structure deposited by SILAR method

(4) Guzeldir B a Saglam M a Ates A b Turut A a

a ATATÜRK UNIVERSITY (Turkey)

b ANKARA UNIVERSITY (Turkey)

Author keywords

A. Thin films; B. Chemical synthesis; D. Electrical properties

Indexed keywords

A. THIN FILMS; AGEING TIME; B. CHEMICAL SYNTHESIS; BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CHARACTERISTIC PARAMETER; CURRENT VOLTAGE; DENSITY DISTRIBUTIONS; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; I-V MEASUREMENTS; IDEALITY FACTORS; INTERFACE STATE; IV CHARACTERISTICS; REVERSE BIAS; ROOM TEMPERATURE; SCHOTTKY CAPACITANCE SPECTROSCOPIES; SERIES RESISTANCES; SILAR METHOD; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; TIME CONSTANTS; TIME DEPENDENT;

ADSORPTION; CALIFORNIUM; CARRIER CONCENTRATION; DISTILLATION; SPECTROSCOPIC ANALYSIS; SYNTHESIS (CHEMICAL); VANADIUM;

ELECTRIC PROPERTIES;

EID: 80054895997 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/j.jpcs.2011.09.008 Document Type: Article

Times cited : (18)

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