Characterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0 0 0 1) by metal-organic chemical vapor deposition

Journal of Magnetism and Magnetic Materials

Volumn 321, Issue 23, 2009, Pages 3833-3838

  Choi, Chul Hwan ^a   Kim, Seon Hyo ^a   Jung, Myung Hwa ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Sogang University   (South Korea)

Author keywords

Diluted magnetic semiconductor; Metal organic chemical vapor deposition; Mn doped GaN; Spintronics

Indexed keywords

COERCIVE FIELD; COMPOSITION PROFILE; CONSTANT LEVEL; CRYSTALLINITIES; DILUTED MAGNETIC SEMICONDUCTOR; DOUBLE EXCHANGE MECHANISM; EFFECTIVE MAGNETIC MOMENTS; ELECTRON CARRIER; FERROMAGNETIC HYSTERESIS LOOPS; GAN FILM; HEXAGONAL WURTZITE STRUCTURE; HIGH QUALITY; IN-DEPTH PROFILE; MAGNETIC FIELD PARALLEL; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; MN CLUSTERS; MN-DOPED GAN; MN-DOPING; NEAR BAND EDGE EMISSIONS; OXIDATION STATE; SECONDARY PHASIS; SEMICONDUCTING BEHAVIOR; SPINTRONICS; YELLOW EMISSIONS; ZERO-FIELD-COOLED;

BINDING ENERGY; BINDING SITES; CARRIER CONCENTRATION; DOPING (ADDITIVES); FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; GALLIUM NITRIDE; HYSTERESIS; HYSTERESIS LOOPS; INDUSTRIAL CHEMICALS; LASER RADIATION; MAGNETIC FIELDS; MAGNETIC MOMENTS; MAGNETIC SEMICONDUCTORS; MANGANESE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; NANOTECHNOLOGY; NUCLEAR ENERGY; ORGANIC CHEMICALS; POTENTIAL ENERGY; SEMICONDUCTING GALLIUM; SEMICONDUCTING ORGANIC COMPOUNDS; VAPOR DEPOSITION; VAPORS; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

MANGANESE COMPOUNDS;

EID: 69949188856     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2009.05.017     Document Type: Article

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