Low-temperature growth of In-assisted silicon nanowires

Journal of Crystal Growth

Volumn 335, Issue 1, 2011, Pages 10-16

  Convertino, Annalisa ^a   Cuscunà, Massimo ^a   Nicotra, Giuseppe ^a   Spinella, Corrado ^a   Felisari, Laura ^b   Fortunato, Guglielmo ^a   Martelli, Faustino ^a  

^a CNR   (Italy)

^b LABORATORIO TASC   (Italy)

Author keywords

A1. Crystal structure; A1. Nanostructures; A3. Chemical vapor depositions processes; B2. Semiconducting silicon

Indexed keywords

A1. CRYSTAL STRUCTURE; A1. NANOSTRUCTURES; B2. SEMICONDUCTING SILICON; CHEMICAL VAPOR; DIFFERENT MECHANISMS; GROWTH FEATURE; LOW TEMPERATURE GROWTH; METALLIC NANOPARTICLES; PLASMA PRE-TREATMENT; SILICON NANOWIRES; SILICON SUBSTRATES;

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; INDIUM; NANOPARTICLES; NANOWIRES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; WIRE;

SEMICONDUCTING SILICON;

EID: 80054730680     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.09.009     Document Type: Article

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