Size-dependent characteristics of indium-seeded Si nanowire growth

Electrochemical and Solid-State Letters

Volumn 11, Issue 9, 2008, Pages

  Iacopi, F ^a   Richard, O ^a   Eichhammer, Y ^a,b   Bender, H ^a   Vereecken, P M ^a,c   De Gendt, S ^a,b,c   Heyns, M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC WIRE; INDIUM; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SILICON; WIRE;

AMORPHOUS SI; CATALYST PARTICLES; CRYSTALLINE QUALITY; ELECTROCHEMICAL SOCIETY (ECS); ELECTRON MICROSCOPY ANALYSIS; GROWTH MORPHOLOGIES; MODEL BASED (OPC); MONOCRYSTALLINE (MD); NANOWIRE GROWTH; SI NANOWIRES; VAPOR-LIQUID-SOLID (VLS) MECHANISMS;

PARTICLE SIZE ANALYSIS;

EID: 48249139829     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2945800     Document Type: Article

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