Stress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime

Applied Physics Letters

Volumn 99, Issue 14, 2011, Pages

  Kim, Byung Hyun ^a,b   Ariesto Pamungkas, Mauludi ^a,c   Park, Mina ^a   Kim, Gyubong ^a   Lee, Kwang Ryeol ^a   Chung, Yong Chae ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Hanyang University   (South Korea)

^c University of Science and Technology (UST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL OBSERVATION; FULL OXIDATION; MECHANICAL CONSTRAINTS; MOLECULAR DYNAMICS SIMULATIONS; SI NANOWIRE; SILICON NANOWIRES; STRESS EVOLUTION; SURFACE OXIDATIONS;

COMPRESSIVE STRESS; CONSTRAINT THEORY; MOLECULAR DYNAMICS; NANOWIRES; OXIDATION; SILICON; TENSILE STRESS;

SILICON OXIDES;

EID: 80053988759     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3643038     Document Type: Article

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