Multipeak-structured photoluminescence mechanisms of as-prepared and oxidized Si nanoporous pillar arrays

Chinese Physics B

Volumn 20, Issue 10, 2011, Pages

  Xu, Hai Jun ^a   Chan, Yu Fei ^a   Su, Lei ^a  

^a BEIJING UNIVERSITY OF CHEMICAL TECHNOLOGY   (China)

Author keywords

annealing effect; luminescent centre; photoluminescence; quantum confinement; silicon nanocrystal

Indexed keywords

ANNEALING EFFECTS; BAND-TO-BAND RECOMBINATION; DOUBLE PEAK; ELECTRONIC INDUSTRIES; HYDROTHERMAL ETCHING; INTERNAL SURFACES; LUMINESCENCE CHARACTERISTICS; LUMINESCENT CENTRES; MAJOR FACTORS; NANO-POROUS; OPTOELECTRONIC NANODEVICES; OXIDATION DEGREE; OXIDE LAYER; PHOTOLUMINESCENCE MECHANISM; PHOTONIC APPLICATION; PILLAR ARRAYS; PL BANDS; POROUS SI; QUANTUM CONFINEMENT EFFECTS; RADIATIVE RECOMBINATION; RECOMBINATION PROCESS; RELATIVE INTENSITY; ROOM TEMPERATURE; SI NANOCRYSTAL; SI OXIDE; SI WAFER; SILICON NANOCRYSTAL; SILICON NANOPOROUS PILLAR ARRAY; TRANSITION PROCESS; VISIBLE PHOTOLUMINESCENCE;

ANNEALING; LIGHT; METRIC SYSTEM; MULTIPHOTON PROCESSES; NANOCRYSTALS; OPTICAL PROPERTIES; OXIDATION; PHOTOLUMINESCENCE; POROUS SILICON; QUANTUM CONFINEMENT; SILICON; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80053965725     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/10/107801     Document Type: Article

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