Atomic transport mechanisms in thin oxide films grown on zirconium by thermal oxidation, as-derived from 18O-tracer experiments

Acta Materialia

Volumn 59, Issue 20, 2011, Pages 7498-7507

  Bakradze, G ^a   Jeurgens, L P H ^a   Acarturk T ^b   Starke, U ^b   Mittemeijer, E J ^a,c  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Mechanism; Nanocrystalline films; Oxidation; Time of flight secondary ion mass spectrometry; Zirconium

Indexed keywords

ATOMIC TRANSPORT; DEPTH DISTRIBUTION; GROWTH MECHANISMS; INITIAL STAGES; ION SPUTTERING; METAL/OXIDE INTERFACE; NANOCRYSTALLINE FILMS; NANOSIZED OXIDES; NATIVE OXIDES; OXIDATION PROCESS; OXYGEN LATTICE; OXYGEN TRANSPORT; SINGLE-CRYSTALLINE; THERMAL OXIDATION; THIN OXIDE FILMS; TIME OF FLIGHT; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY; TRANSPORT CONTROL; TWO STAGE;

EXPERIMENTS; FILM GROWTH; GRAIN BOUNDARIES; IONS; ISOTOPES; OXIDATION; OXIDATION RESISTANCE; OXYGEN; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SPECTROMETRY; ZIRCONIUM;

OXIDE FILMS;

EID: 80053948645     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2011.08.035     Document Type: Article

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