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Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 12, 2011, Pages

Tailoring the electrical properties of Ge/GaAs by film deposition rate and preparation of fully compensated Ge films

(10) Mitin, V F a Lazarov, V K b Lytvyn, P M a Hasnip, P J b Kholevchuk, V V a Matveeva, L A a Kolyadina, E Yu a Kotenko, I E c Mitin, V V c Venger, E F a

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

b UNIVERSITY OF YORK (United Kingdom)

c NATIONAL TECHNICAL UNIVERSITY OF UKRAINE (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80053892480 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.84.125316 Document Type: Article

Times cited : (11)

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