Characterization of antiphase domains on GaAs grown on Ge substrates by conductive atomic force microscopy for photovoltaic applications

Solar Energy Materials and Solar Cells

Volumn 95, Issue 7, 2011, Pages 1949-1954

  Galiana, B ^a   Rey Stolle, I ^c   Beinik, I ^b   Algora, C ^c   Teichert, C ^b   Molina Aldareguia, J M ^d   Tejedor, P ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSITY OF LEOBEN   (Austria)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^d IMDEA MATERIALS INSTITUTE   (Spain)

Author keywords

Antiphase domains; Conductive atomic force microscopy; GaAs on Ge; IIIV solar cells

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SOLAR CELLS;

ANTIPHASE DOMAINS; CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRICAL BEHAVIORS; GAAS; III-V SOLAR CELLS; INHOMOGENEOUS CONDUCTIVITY; PARALLEL RESISTANCE; PHOTOVOLTAIC APPLICATIONS;

GERMANIUM;

EID: 79955483248     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.12.021     Document Type: Article

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