Ge-on-GaAs film resistance thermometers for cryogenic applications

Cryogenics

Volumn 47, Issue 9-10, 2007, Pages 474-482

  Mitin, V F ^a,b   McDonald, P C ^c   Pavese, F ^d   Boltovets, N S ^e   Kholevchuk, V V ^a,b   Nemish, I Yu ^a   Basanets, V V ^e   Dugaev, V K ^f   Sorokin, P V ^g   Konakova, R V ^a   Venger, E F ^a   Mitin, E V ^a,b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b Research and Production Company MicroSensor   (Ukraine)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^d Istituto di Metrologia Gustavo Colonnetti   (Italy)

^e Orion Research Institute   (Ukraine)

^f FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^g KHARKOV INSTITUTE OF PHYSICS AND TECHNOLOGY   (Ukraine)

Author keywords

A. Semiconductors; A. Thin films; D. Cryoelectronics; D. Instrumentation; D. Magnetic measurements

Indexed keywords

ELECTRIC RESISTANCE; LOW TEMPERATURE PHENOMENA; MAGNETIC FIELD EFFECTS; MAGNETIC VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; THERMOMETERS;

CRYOELECTRONICS; CRYOGENIC APPLICATIONS; HIGH DEVICE SENSITIVITY;

THIN FILMS;

EID: 34948814574     PISSN: 00112275     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cryogenics.2007.04.014     Document Type: Article

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