Preparation and properties of heavily doped and strongly compensated Ge films on GaAs

Journal of Applied Physics

Volumn 107, Issue 3, 2010, Pages

  Mitin, V F ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; COMPENSATION DEGREE; DOPING LEVELS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTROSTATIC POTENTIALS; FREE CHARGE CARRIERS; GAAS; GE FILMS; HEAVILY DOPED; HIGH RESISTIVITY; POTENTIAL RELIEF; PREPARATION AND PROPERTIES; PREPARATION CONDITIONS; SEMI-INSULATING GAAS; SINGLE-CRYSTALLINE;

ACTIVATION ENERGY; CARRIER MOBILITY; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM ARSENIDE; GERMANIUM; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SOLVENTS; TWO DIMENSIONAL;

FILM PREPARATION;

EID: 76949104823     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3290967     Document Type: Article

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