Resonant photoemission of rare earth doped GaN thin films

EPJ Applied Physics

Volumn 56, Issue 1, 2011, Pages

  McHale, S R ^a   McClory, J W ^a   Petrosky, J C ^a   Wu, J ^b   Palai, R ^b   Losovyj, Ya B ^c   Dowben, P A ^d  

^a AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^c LOUISIANA STATE UNIVERSITY   (United States)

^d UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FANO PROFILE; FANO RESONANCES; GAN THIN FILMS; RARE EARTH DOPED; RESONANT ENHANCEMENTS; RESONANT PHOTOEMISSION; SYNCHROTRON PHOTOEMISSION SPECTROSCOPY; VALENCE-BAND MAXIMUMS;

ERBIUM; GADOLINIUM; GALLIUM NITRIDE; PHOTOELECTRON SPECTROSCOPY; THIN FILMS; VALENCE BANDS; YTTERBIUM;

RARE EARTHS;

EID: 80053621587     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap/2011110235     Document Type: Conference Paper

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