Valence transition of Eu ions in GaN near the surface

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1167-1171

  Maruyama, Taka ^a   Morishima, S ^b   Bang, H ^b   Akimoto, K ^b   Nanishi, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Characterization; A1. Surface; A3. Molecular beam epitaxy; B1. Nitrides; B1. Rare earth compounds; B1. Semiconducting gallium compounds

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EUROPIUM; MOLECULAR BEAM EPITAXY; PHOTOEMISSION; PHOTOLUMINESCENCE; POSITIVE IONS; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTRUM ANALYSIS; X RAY SPECTROSCOPY;

PHOTOEMISSION SPECTROCOPY;

GALLIUM NITRIDE;

EID: 19244382809     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02150-9     Document Type: Article

References (10)

1. Proceedings of the international workshop on nitride semiconductros