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Applied Physics Letters

Volumn 81, Issue 11, 2002, Pages 1943-1945

Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN

(6) Nakanishi, Y a Wakahara, A a Okada, H a Yoshida, A a Ohshima, T b Itoh, H b

a TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japan)

b JAPAN ATOMIC ENERGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PERCENT; ELECTRON DOSE; ELECTRON FLUENCES; EU-DOPED GAN; EXCITATION SOURCES; GAN EPITAXIAL LAYERS; HE-CD LASERS; NEAR BAND EDGE EMISSIONS; PEAK CONCENTRATIONS; PHOTOLUMINESCENCE PROPERTIES; PL INTENSITY; SAPPHIRE SUBSTRATES; TEMPERATURE RANGE;

ELECTRONS; EUROPIUM; GALLIUM NITRIDE; ION IMPLANTATION; LASER EXCITATION; PHOTOLUMINESCENCE; SAPPHIRE; SOLAR CELL ARRAYS;

ELECTRON IRRADIATION;

EID: 79956008455 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1504873 Document Type: Article

Times cited : (20)

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