Comparison of n-type Gd2O3 and Gd-doped HfO 2

Journal of Physics Condensed Matter

Volumn 21, Issue 4, 2009, Pages

  Losovyj, Ya B ^a,b   Wooten, David ^c   Santana, Juan Colon ^a   An, Joonhee Michael ^a   Belashchenko, K D ^a   Lozova, N ^b   Petrosky, J ^c   Sokolov, A ^a   Tang, Jinke ^d   Wang, Wendong ^d   Arulsamy, Navamoney ^d   Dowben, P A ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b LOUISIANA STATE UNIVERSITY   (United States)

^c AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^d UNIVERSITY OF WYOMING   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISTILLATION; HAFNIUM COMPOUNDS; HETEROJUNCTIONS; PHOTOEXCITATION; SEMICONDUCTING SILICON COMPOUNDS;

P-TYPE SILICONS; REDUCING ATMOSPHERES; RESONANT PHOTOEMISSIONS; SILICON HETEROJUNCTIONS; VALENCE-BAND MAXIMUMS;

GADOLINIUM;

EID: 63649134151     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/4/045602     Document Type: Article

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