Optical properties of Yb ions in GaN epilayer

Optical Materials

Volumn 23, Issue 1-2, 2003, Pages 175-181

  Jadwisienczak, W M ^a   Lozykowski, H J ^a  

^a OHIO UNIVERSITY   (United States)

Author keywords

Doping; RE ions spectroscopy; Semiconductor

Indexed keywords

CATHODOLUMINESCENCE; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; POSITIVE IONS; SAPPHIRE; SEMICONDUCTOR DOPING;

ENERGY LEVEL DIAGRAM;

GALLIUM NITRIDE;

EID: 0038010604     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(03)00080-6     Document Type: Conference Paper

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