Ultralow-power Ni/GeO/STO/TaN resistive switching memory

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 1020-1022

  Cheng, C H ^a   Chin, Albert ^b   Yeh, F S ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

GeO2; resistive random accessmemory (RRAM); SrTiO3 (STO)

Indexed keywords

GEO2; LOW-RESISTANCE STATE; MEMORY WINDOW; METAL-OXIDE; METALLIC FILAMENTS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESSMEMORY (RRAM); RESISTIVE SWITCHING MEMORIES; SRTIO; ULTRA-LOW POWER;

NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; STRONTIUM ALLOYS; SWITCHING SYSTEMS;

METALLIC COMPOUNDS;

EID: 77956169769     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2055828     Document Type: Article

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