A 96% efficient high-frequency DC-DC converter using E-Mode GaN DHFETs on Si

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1370-1372

  Das, Jo ^a   Everts, Jordi ^b,c   Van Den Keybus, Jeroen ^d   Van Hove, Marleen ^a   Visalli, Domenica ^a   Srivastava, Puneet ^a   Marcon, Denis ^a   Cheng, Kai ^a   Leys, Maarten ^a   Decoutere, Stefaan ^a   Driesen, Johan ^b   Borghs, Gustaaf ^a  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c Katholieke Hogeschool Limburg   (Belgium)

^d TRIPHASE   (Belgium)

Author keywords

Converters; efficiency; GaN; high voltage; power field effect transistors (FETs); SPICE

Indexed keywords

ALGAN; BOOST CONVERTER; CONVERTER EFFICIENCY; DOUBLE HETEROSTRUCTURES; FIGURES OF MERITS; GAN; GATE WIDTHS; HIGH FREQUENCY HF; HIGH VOLTAGE; HIGH-FREQUENCY POWER; III-NITRIDE; NORMALLY OFF; OUTPUT POWER; POWER FIELD-EFFECT TRANSISTORS; POWER-LOSSES; SWITCHING PERFORMANCE; SWITCHING TIME;

DC POWER TRANSMISSION; EFFICIENCY; GALLIUM NITRIDE; MESFET DEVICES; SPICE; TORQUE CONVERTERS;

DC-DC CONVERTERS;

EID: 80053564882     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2162393     Document Type: Article

References (16)

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