Switching assessment of GaN transistors for power conversion applications

2009 13th European Conference on Power Electronics and Applications, EPE '09

Volumn , Issue , 2009, Pages

  Das, J ^a   Marcon, D ^a   Van Hove, M ^a   Derluyn, J ^a   Germain, M ^a   Borghs, G ^a  

^a IMEC   (Belgium)

Author keywords

Modeling; Power semiconductor devices; Semiconductor heterojunctions; Switching transients

Indexed keywords

COST-EFFECTIVE SOLUTIONS; HIGH BREAKDOWN VOLTAGE; III-NITRIDE; INPUT CAPACITANCE; MODELING POWER; ON-RESISTANCE; POWER CONVERSION; SEMICONDUCTOR HETEROJUNCTIONS; SI SUBSTRATES; SWITCHING BEHAVIORS; SWITCHING TRANSIENT;

GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; PHOTOLITHOGRAPHY; POWER ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SWITCHES; SWITCHING; TRANSIENTS;

GALLIUM ALLOYS;

EID: 72949116863     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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