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Electrochemical and Solid-State Letters

Volumn 14, Issue 11, 2011, Pages

Low-temperature solution-processed ZrO2 gate insulators for thin-film transistors using high-pressure annealing

(4) Kim, Si Joon a Yoon, Doo Hyun a Rim, You Seung a Kim, Hyun Jae a

a Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; DEHYDROXYLATIONS; DIELECTRIC STRENGTHS; GATE INSULATOR; HIGH-PRESSURE ANNEALING; LOW TEMPERATURES; ON/OFF RATIO; SATURATION MOBILITY; SOLUTION-PROCESSED;

ANNEALING; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

ZIRCONIUM ALLOYS;

EID: 80053543687 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/2.006111esl Document Type: Article

Times cited : (49)

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