Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors

Journal of Vacuum Science and Technology B

Volumn 29, Issue 5, 2011, Pages

  Periasamy, C ^a   Chakrabarti, P ^a,b  

^a BANARAS HINDU UNIVERSITY   (India)

^b MOTILAL NEHRU NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; II-VI SEMICONDUCTORS; NANOTECHNOLOGY; OXIDE FILMS; OXIDE MINERALS; SILICON; THERMAL EVAPORATION; ZINC OXIDE;

C AXIS ORIENTED; EXPERIMENTAL INVESTIGATIONS; HETEROJUNCTION DEVICES; MEASURED CURRENTS; RECTIFYING BEHAVIORS; THERMAL EVAPORATION TECHNIQUE; ZINC OXIDE (ZNO); ZNO/P-SI HETEROJUNCTIONS;

HETEROJUNCTIONS;

EID: 80053536172     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3628638     Document Type: Article

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