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Volumn 26, Issue 6, 2008, Pages 1993-2007

Investigation of the oxide-assisted growth mechanism for nanowire growth and a model for this mechanism

Author keywords

[No Author keywords available]

Indexed keywords

CATALYTIC AGENTS; DROPLET SURFACES; GROWTH MECHANISMS; HIGH DENSITIES; MELTING TEMPERATURES; NANOWIRE GROWTHS; SALIENT FEATURES; TEMPERATURE RANGES;

EID: 57249094144     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3002486     Document Type: Article
Times cited : (26)

References (57)
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    • This mechanism is also called vapor-solid (VS) mechanism. See, for example, Z. W. Pan, Z. R. Dai, and Z. L. Wang, Science 291, 1947 (2001). In this mechanism, the formation of nanowires is believed to be done by (a) anisotropic growth mechanism, (b) Frank's screw dislocation mechanism, (c) deposition of gas-phase reactants at defect sites, and/or (d) self-catalytic VLS mechanism.
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