Epitaxial growth and structure of Ge-Sb-Te phase change materials on GaSb

Journal of Vacuum Science and Technology B

Volumn 28, Issue 3, 2010, Pages

  Shayduk, Roman ^a   Katmis, Ferhat ^a   Braun, Wolfgang ^a   Riechert, Henning ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; GALLIUM COMPOUNDS; GERMANIUM COMPOUNDS; III-V SEMICONDUCTORS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MOLECULAR CRYSTALS; TELLURIUM COMPOUNDS; X RAY DIFFRACTION;

ANISOTROPIC BROADENING; EPITAXIALLY GROWN; GE:SB:TE; IN-SITU SYNCHROTRONS; MOLECULAR-BEAM EPITAXY; RHOMBOHEDRAL DISTORTION; SITU SYNCHROTRON X-RAY DIFFRACTIONS; SUBSTRATES TEMPERATURE; WEAK BOND; X-RAY DIFFRACTION DATA;

PHASE CHANGE MATERIALS;

EID: 77952994832     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3305482     Document Type: Conference Paper

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