SCOPUS 정보 검색 플랫폼

Volumn 99, Issue 13, 2011, Pages

Band structure and electronic characteristics of cubic La2O 3 gate dielectrics epitaxially grown on InP substrates

(10) Zhang, Xinqiang a Tu, Hailing a Zhao, Hongbin a Yang, Mengmeng a Wang, Xiaona a Xiong, Yuhua a Yang, Zhimin a Du, Jun a Wang, Wenwu b Chen, Dapeng b

a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS (China)

b INSTITUTE OF MICROELECTRONICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; CUBIC STRUCTURE; ELECTRONIC CHARACTERISTICS; EPITAXIAL RELATIONSHIPS; EPITAXIALLY GROWN; EQUIVALENT OXIDE THICKNESS; INP; INP SUBSTRATES; INTERFACE LAYER; LATTICE MATCHING;

DIELECTRIC MATERIALS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GATE DIELECTRICS; LANTHANUM OXIDES; SUBSTRATES; ULTRATHIN FILMS;

LANTHANUM;

EID: 80053502585 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3643470 Document Type: Article

Times cited : (15)

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