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Volumn 99, Issue 12, 2011, Pages

On the use of the term "ambipolar"

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; DEVICE OPERATIONS;

EID: 80053400957     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3641898     Document Type: Article
Times cited : (24)

References (22)
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    • Javey, A.1    Shim, M.2    Dai, H.3
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    • 0346506367 scopus 로고
    • 10.1103/PhysRev.81.835
    • J. R. Haynes and W. Shockley, Phys. Rev. 81, 835 (1951). 10.1103/PhysRev.81.835
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    • Haynes, J.R.1    Shockley, W.2
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    • 10.1103/PhysRev.91.282
    • W. van Roosbroeck, Phys. Rev. 91, 282 (1953). 10.1103/PhysRev.91.282
    • (1953) Phys. Rev. , vol.91 , pp. 282
    • Van Roosbroeck, W.1
  • 17
    • 0030216999 scopus 로고    scopus 로고
    • 3-GaAs interfaces for inversion/accumulation device and surface passivation applications
    • DOI 10.1016/0038-1101(96)00006-8, PII S0038110196000068
    • M. Passlack, M. Hong, and J. P. Mannaerts, Solid-State Electron. 39, 1133 (1996). 10.1016/0038-1101(96)00006-8 (Pubitemid 126365367)
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    • J. G. Champlain, J. Appl. Phys. 109, 084515 (2011). 10.1063/1.3573517
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    • Champlain, J.G.1
  • 22
    • 80053414922 scopus 로고    scopus 로고
    • The informed reader will realize that ambipolar transport occurs in forward biased pn junctions; however, it results in zero net current and is not the major charge transport mechanism within the device.
    • The informed reader will realize that ambipolar transport occurs in forward biased pn junctions; however, it results in zero net current and is not the major charge transport mechanism within the device.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.