Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Journal of Crystal Growth

Volumn 334, Issue 1, 2011, Pages 103-107

  Svensson, S P ^a   Donetsky, D ^b   Wang, D ^b   Hier, H ^a   Crowne, F J ^a   Belenky, G ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Stony Brook University   (United States)

Author keywords

A1. Defects; A3. Molecular beam epitaxy; A3. Superlattices; B1. Antimonides; B2. Semiconducting IIIV materials; B3. Infrared devices

Indexed keywords

ABSORPTION WAVELENGTHS; ANTIMONIDES; DEFECT CENTERS; DIFFERENT SUBSTRATES; GROWTH WINDOW; HIGH RESOLUTION X RAY DIFFRACTION; INAS; LIFETIME CHARACTERIZATION; MATERIAL QUALITY; MINORITY CARRIER LIFETIMES; NATIVE DEFECT; OBSERVATION POINT; OPTIMUM TEMPERATURE; PEAK WIDTHS; SEMI CONDUCTING III-V MATERIALS; SPATIAL LOCATION; STRAINED LAYER SUPERLATTICE; SUBSTRATE TEMPERATURE; TEMPERATURE WINDOW; TYPE II; ZERO-ORDER DIFFRACTION;

CARRIER LIFETIME; CHARACTERIZATION; DEFECTS; GROWTH (MATERIALS); INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM; SUPERLATTICES; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 80053328059     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.08.030     Document Type: Article

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