Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

Applied Physics Letters

Volumn 95, Issue 21, 2009, Pages

  Donetsky, Dmitry ^a   Svensson, Stefan P ^b   Vorobjev, Leonid E ^c   Belenky, Gregory ^a  

^a Stony Brook University   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONFINEMENTS; CARRIER LIFETIME MEASUREMENTS; EXCESS CARRIER CONCENTRATION; EXCITATION POWER; FREQUENCY DOMAINS; INAS/GASB; INTERBAND ABSORPTION; LIFETIME MEASUREMENTS; MID-INFRARED RANGE; MINORITY CARRIER LIFETIMES; MODULATED EXCITATIONS; PL KINETICS; STRAINED-LAYER SUPERLATTICE; TIME-RESOLVED PHOTOLUMINESCENCE;

CARRIER CONCENTRATION; CRYSTAL GROWTH; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; QUANTUM WELL LASERS; SUPERLATTICES;

CARRIER LIFETIME;

EID: 71549172507     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3267103     Document Type: Article

References (5)

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