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Volumn 7298, Issue , 2009, Pages
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Minority carrier lifetime characteristics in type II InAs/GaSb LWIR superlattice n +πp + photodiodes
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Author keywords
[No Author keywords available]
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Indexed keywords
BACKGROUND LIMITEDS;
CARRIER RECOMBINATION;
CURRENT COMPONENT;
INAS/GASB;
MINORITY CARRIER LIFETIMES;
ORDER OF MAGNITUDE;
PHOTON FLUX;
RECOMBINATION CENTERS;
REVERSE BIAS;
SHOCKLEY-READ-HALL;
SPACE CHARGES;
TEMPERATURE RANGE;
TRAP ASSISTED TUNNELING;
TYPE II;
VOLTAGE DATA;
INFRARED RADIATION;
OPTOELECTRONIC DEVICES;
SEMICONDUCTOR QUANTUM DOTS;
CARRIER LIFETIME;
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EID: 69949151890
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.819641 Document Type: Conference Paper |
Times cited : (81)
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References (7)
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