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Volumn 7298, Issue , 2009, Pages

Minority carrier lifetime characteristics in type II InAs/GaSb LWIR superlattice n +πp + photodiodes

Author keywords

[No Author keywords available]

Indexed keywords

BACKGROUND LIMITEDS; CARRIER RECOMBINATION; CURRENT COMPONENT; INAS/GASB; MINORITY CARRIER LIFETIMES; ORDER OF MAGNITUDE; PHOTON FLUX; RECOMBINATION CENTERS; REVERSE BIAS; SHOCKLEY-READ-HALL; SPACE CHARGES; TEMPERATURE RANGE; TRAP ASSISTED TUNNELING; TYPE II; VOLTAGE DATA;

EID: 69949151890     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.819641     Document Type: Conference Paper
Times cited : (81)

References (7)
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  • 3
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    • Comparison of the InAs/GaSb superlattice with HgCdTe for dark current mechanisms in LWIR diodes
    • October 30-November 1, Baltimore Maryland
    • D. R. Rhiger, Amanda Gerrish, and Cory Hill, "Comparison of the InAs/GaSb Superlattice with HgCdTe for Dark Current Mechanisms in LWIR Diodes", The 2007 U.S. Workshop on the Physics and Chemistry of II-VI Materials, October 30-November 1, 2007, Baltimore Maryland.
    • (2007) The 2007 U.S. Workshop on the Physics and Chemistry of II-VI Materials
    • Rhiger, D.R.1    Gerrish, A.2    Hill, C.3
  • 4
    • 69949152909 scopus 로고    scopus 로고
    • Electrical and optical characteristics of long wavelength infrared type II InAs/GaSb photodiodes
    • October 30-November 1, Baltimore Maryland
    • J. Pellegrino and R. DeWames, "Electrical and Optical Characteristics of Long Wavelength Infrared Type II InAs/GaSb Photodiodes", The 2007 U.S. Workshop on the Physics and Chemistry of II-VI Materials, October 30-November 1, 2007, Baltimore Maryland.
    • (2007) The 2007 U.S. Workshop on the Physics and Chemistry of II-VI Materials
    • Pellegrino, J.1    Dewames, R.2
  • 5
    • 34948861796 scopus 로고    scopus 로고
    • Beryllium compensation doping of InAs/GaSb infrared superlattice photodiodes
    • 1 October
    • Darin Hoffman, Binh Minh Nguyen, Pierre -Yves Delaunay, Andrew Hood, Manijeh Razeghi, and Joe. Pellegrino, "Beryllium compensation doping of InAs/GaSb infrared superlattice photodiodes", Appl. Phys. Lett. Vol.91, No.14, 1 October 2007, pp143507- 1-143507-3.
    • (2007) Appl. Phys. Lett. , vol.91 , Issue.14 , pp. 1435071-1435073
    • Hoffman, D.1    Nguyen, B.M.2    Delaunay, P.-Y.3    Hood, A.4    Razeghi, M.5    Pellegrino, J.6
  • 6
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    • Radiometric characterization of strained layer superlattice focal plane array under low irradiance conditions
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.