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Applied Physics Letters

Volumn 97, Issue 5, 2010, Pages

Minority carrier lifetime in type-2 InAs-GaSb strained-layer superlattices and bulk HgCdTe materials

(4) Donetsky, Dmitry a Belenky, Gregory a,c Svensson, Stefan b Suchalkin, Sergei a,c

a Stony Brook University (United States)

b U S ARMY RESEARCH LABORATORY (United States)

c Power Photonic Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HGCDTE MATERIALS; INAS; LONGWAVE INFRARED; MIDWAVE INFRARED; MINORITY CARRIER LIFETIMES; OPTICAL MODULATION RESPONSE; RADIATIVE RECOMBINATION; SHOCKLEY-READ-HALL; STRAINED-LAYER SUPERLATTICE;

CARRIER LIFETIME; INFRARED RADIATION; MERCURY (METAL); MERCURY COMPOUNDS; TELLURIUM COMPOUNDS; WAVES;

SUPERLATTICES;

EID: 77955735921 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3476352 Document Type: Article

Times cited : (130)

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