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Volumn 21, Issue 39, 2011, Pages 15201-15204

Single crystal n-channel field effect transistors from solution-processed silylethynylated tetraazapentacene

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT MOBILITIES; GROWN FROM SOLUTIONS; N-CHANNEL; POOR SOLVENTS; SOLUTION-PROCESSED; SOURCE AND DRAIN ELECTRODES;

EID: 80053325727     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/c1jm13153b     Document Type: Article
Times cited : (48)

References (33)
  • 30
    • 77949527385 scopus 로고    scopus 로고
    • In our earlier report, the thin film transistors of TIPS-TAP had vacuum-deposited gold as top-contact drain/source electrodes, which did not led to large contact resistance. The possible reason for such difference is that in comparison with the vacuum-deposited gold, the "gluing" gold film used in this study had its apparent work function less changed by coating organic molecules. For the report that the apparent work function of gold can change by up to 1 eV upon the metal surface being coated with organic molecules, see
    • C. Di Y. Liu G. Yu D. Zhu Acc. Chem. Res. 2009 42 1573
    • (2009) Acc. Chem. Res. , vol.42 , pp. 1573
    • Di, C.1    Liu, Y.2    Yu, G.3    Zhu, D.4
  • 32
    • 0031343407 scopus 로고    scopus 로고
    • The single crystal OFETs of TIPS-TAP with Ag drain/source electrodes exhibited slight suppression of the drain current in the linear regime as shown in Fig. 4d suggesting less significant contact resistance than those with Au electrodes. Due to this contact resistance, the mobility obtained from the solution-processed single crystal OFETs of TIPS-TAP may probably not reach the intrinsic property of this material. Such contact resistance may be further lowered by using metals with even lower work function. For example of using low-work-function metals as drain/source electrodes for OFETs, see
    • I. H. Campbell J. D. Kress R. L. Martin D. L. Smith N. N. Barashkov J. P. Ferraris Appl. Phys. Lett. 1997 71 3528
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 3528
    • Campbell, I.H.1    Kress, J.D.2    Martin, R.L.3    Smith, D.L.4    Barashkov, N.N.5    Ferraris, J.P.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.