High-performance air-stable bipolar field-effect transistors of organic single-crystalline ribbons with an air-gap dielectric

Advanced Materials

Volumn 20, Issue 8, 2008, Pages 1511-1515

  Tang, Qingxin ^a,b   Tong, Yanhong ^a   Li, Hongxiang ^a,b   Ji, Zhuoyu ^a,b   Li, Liqiang ^a   Hu, Wenping ^a   Liu, Yunqi ^a   Zhu, Daoben ^a  

^a INSTITUTE OF CHEMISTRY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CRYSTALLINE MATERIALS; DIELECTRIC MATERIALS; GALLIUM ALLOYS; HOLE MOBILITY; INTEGRATED CIRCUITS; MICROMETERS; THICKNESS MEASUREMENT; TRANSISTORS;

BIPOLAR; BIPOLAR DEVICES; DEVICE FABRICATIONS; GAP DIELECTRICS; HIGH-PERFORMANCE; LOW-POWER; NOISE MARGINS; OPERATIONAL STABILITIES; ORGANIC; ORGANIC INTEGRATED CIRCUITS; PROBE STATIONS; STABLE CHARACTERISTICS;

FIELD EFFECT TRANSISTORS;

EID: 47749115375     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200702145     Document Type: Article

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