Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Meissner, Christian ^a,b   Ploch, Simon ^b   Pristovsek, Markus ^b   Kneissl, Michael ^b  

^a ISAS INSTITUTE FOR ANALYTICAL SCIENCES   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; AVERAGE DIAMETER; AVERAGE STRUCTURE; CONSTANT RATIO; EX-SITU ATOMIC FORCE MICROSCOPY; GAN/SAPPHIRE; GROWTH REGIME; GROWTH TIME; HEXAGONAL STRUCTURES; IN-SITU; INDIUM NITRIDE; INN QUANTUM DOTS; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; QUANTUM DOT; STABILISATION; SUBMONOLAYER COVERAGE; TRIMETHYLINDIUM; V/III RATIO; VOLMER-WEBER GROWTH MODE; VOLMER-WEBER MODES; WETTING LAYER;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; COALESCENCE; DESORPTION; GALLIUM NITRIDE; MONOLAYERS; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPIC ELLIPSOMETRY;

QUANTUM CHEMISTRY;

EID: 79251617763     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880872     Document Type: Article

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