Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample

Optics Express

Volumn 19, Issue 20, 2011, Pages 18893-18902

  Wang, Hsiang Chen ^a   Yu, Xuan Yu ^a   Chueh, Yu Lun ^b   Malinauskas, Tadas ^c   Jarasiunas, Kestutis ^c   Feng, Shih Wei ^d  

^a NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c VILNIUS UNIVERSITY   (Lithuania)

^d NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY (ORGANIC); DIFFUSION; FOUR WAVE MIXING; LIGHT EMISSION; OPTICAL WAVEGUIDES; PLASMONS;

CARRIER DECAY; CARRIER DYNAMICS; CARRIER RECOMBINATION; DECAY RATE; DECAY TIME; DIFFUSION COEFFICIENTS; EMISSION ENHANCEMENT; INGAN/GAN; LIGHT EMISSION EFFICIENCY; PICOSECONDS; SURFACE PLASMON COUPLING; SURFACE PLASMONS; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS; TEMPERATURE DEPENDENT; TIME-RESOLVED PHOTOLUMINESCENCE; TRANSIENT GRATING;

SEMICONDUCTOR QUANTUM WELLS;

GALLIUM; GALLIUM NITRATE; IMMUNOSUPPRESSIVE AGENT;

ARTICLE; CHEMISTRY; COMPUTER SIMULATION; EQUIPMENT DESIGN; FOURIER ANALYSIS; LIGHT; LUMINESCENCE; METHODOLOGY; NANOTECHNOLOGY; OPTICS; QUANTUM THEORY; SURFACE PLASMON RESONANCE; TEMPERATURE;

COMPUTER SIMULATION; EQUIPMENT DESIGN; FOURIER ANALYSIS; GALLIUM; IMMUNOSUPPRESSIVE AGENTS; LIGHT; LUMINESCENCE; NANOTECHNOLOGY; OPTICS AND PHOTONICS; QUANTUM THEORY; SURFACE PLASMON RESONANCE; TEMPERATURE;

EID: 80053249689     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.018893     Document Type: Article

References (22)

1. S. A. Maier, Plasmonics: Fundamentals and Applications (Springer, New York, 2007).
2. S. A. Maier and H. A. Atwater, "Localization and guiding of electromagnetic energy in metal/dielectric structures," J. Appl. Phys. 98(1), 011101 (2005).
3. H. L. Chen, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, "Characteristics of light emitter coupling with surface plasmons in air/metal/dielectric grating structures," J. Opt. Soc. Am. B 26(5), 923 (2009).
4. V. V. Klimov and D. V. Guzatov, "Strongly localized plasmon oscillations in a cluster of two metallic nanospheres and their influence on spontaneous emission of an atom," Phys. Rev. B 75 (2), 024303, (2007).
5. I. Gontijo, M. Boroditsky, E. Yablonovitch, S. Keller, U. K. Mishra, and S. P. DenBaars, "Coupling of InGaN quantum-well photoluminescence to silver surface plasmons," Phys. Rev. B 60(16), 11564-11567 (1999).
6. K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, "Surface-plasmon-enhanced light emitters based on InGaN quantum wells," Nat. Mater. 3(9), 601-605 (2004).
7. A. Neogi, C.-W. Lee, H. O. Everitt, T. Kuroda, A. Tackeuchi, and E. Yablonvitch, "Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling," Phys. Rev. B 66(15), 153305 (2002).
8. J. B. Khurgin and G. Sun, "Enhancement of light absorption in a quantum well by surface plasmon polariton," Appl. Phys. Lett. 94(19), 191106 (2009).
9. K. Jarasiunas, R. Aleksiejunas, T. Malinauskas, V. Gudelis, T. Tamulevicius, S. Tamulevicius, A. Guobiene, A. Usikov, V. Dmitriev, and H. J. Gerritsen, "Implementation of diffractive optical element in four-wave mixing scheme for ex situ characterization of hydride vapor phase epitaxy-grown GaN layers," Rev. Sci. Instrum. 78(3), 033901 (2007).
10. H.-C. Wang, S.-W. Feng, T. Malinauskas, K. Jarasiunas, C.-C. Ting, S. Liu, and C.-Y. Tsai, "Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate," Thin Solid Films 518(24), 7291-7294 (2010).
11. W. C. Liu and D. P. Tsai, "Optical tunneling effect of surface plasmon polaritons and localized surface plasmon resonance," Phys. Rev. B 65(15), 155423 (2002).
12. T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E.-K. Suh, "Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster," Appl. Phys. Lett. 95(11), 111112 (2009).
13. D. B. Tran Thoai, R. Zimmermann, M. Grundmann, and D. Bimberg, "Image charges in semiconductor quantum wells: Effect on exciton binding energy," Phys. Rev. B Condens. Matter 42(9), 5906-5909 (1990).
14. D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, "Localized surface plasmon-induced emission enhancement of a green light-emitting diode," Nanotechnology 19(34), 345201 (2008).
15. H. C. Wang, S. J. Lin, Y. C. Lu, Y. C. Cheng, C. C. Yang, and K. J. Ma, "Carrier relaxation in InGaN/GaN quantum wells with nanometer-scale cluster structures," Appl. Phys. Lett. 85(8), 1371 (2004).
16. M. Syvajarvi and R. Yakimova, Wide Band Gap Materials and New Developments (Research Signpost, 2007).
17. H. C. Wang, Y. C. Lu, C. Y. Chen, and C. C. Yang, "Carrier capture times of the localized states in an InGaN thin film with indium-rich nanocluster structures," Appl. Phys. Lett. 89(1), 011906 (2006).
18. S. Nargelas, T. Malinauskas, A. Kadys, E. Dimakis, T. D. Moustakas, and K. Jarašiuunas, "Nonlinear carrier recombination and transport features in highly excited InN layer," Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(S2), S735-S738 (2009).
19. T. Malinauskas, K. Jarasiunas, S. Miasojedovas, S. Jursenas, B. Beaumont, and P. Gibart, "Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques," Appl. Phys. Lett. 88(20), 202109 (2006).
20. K. Binder and D. W. Heermann, Monte Carlo Simulation in Statistical Physics, 2nd edn. (Springer, Berlin, Heidelberg 1992).
21. I. Vurgaftman and J. R. Meyer, "Band parameters for nitrogen-containing semiconductors," J. Appl. Phys. 94(6), 3675 (2003).
22. T. Malinauskas, K. Jarasiunas, M. Heuken, F. Scholz, and P. Bruckner, "Diffusion and recombination of degenerate carrier plasma in GaN," Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(S2), S743-S746 (2009).