Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate

Thin Solid Films

Volumn 518, Issue 24, 2010, Pages 7291-7294

  Wang, Hsiang Chen ^a   Feng, Shih Wei ^b   Malinauskas, T ^c   Jarasiunas, K ^c   Ting, Chu Chi ^a   Liu, Sean ^d   Tsai, Chin Yi ^b  

^a NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^c VILNIUS UNIVERSITY   (Lithuania)

^d NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

Four wave mixing; Green InGaN LEDs; Pattern sapphire substrate

Indexed keywords

CARRIER CONFINEMENTS; CARRIER DYNAMICS; DIFFUSION COEFFICIENTS; INGAN LED; INGAN/GAN; LIGHT EMISSION EFFICIENCY; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTIPLE QUANTUM WELLS; PATTERN SAPPHIRE; PICO-SECOND PULSE; POLISHING PROCESSS; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SAPPHIRE SURFACE; TIME-RESOLVED FOUR-WAVE MIXING;

LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SURFACE ROUGHNESS;

FOUR WAVE MIXING;

EID: 77956879709     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.04.093     Document Type: Conference Paper

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