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Volumn 6, Issue 2, 1996, Pages 261-265

Fabrication of InP-based freestanding microstructures by selective surface micromachining

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; EPITAXIAL GROWTH; ETCHING; MICROMACHINING; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; THICK FILMS;

EID: 0030156449     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/6/2/008     Document Type: Article
Times cited : (45)

References (21)
  • 2
    • 0029288525 scopus 로고
    • Vertical coupled-cavity microinterferometer on GaAs with deformable-membrane top mirror
    • Larson M C, Pezeshki B and Harris J S 1995 Vertical coupled-cavity microinterferometer on GaAs with deformable-membrane top mirror IEEE Photon. Technol. Lett. 7 382-4
    • (1995) IEEE Photon. Technol. Lett. , vol.7 , pp. 382-384
    • Larson, M.C.1    Pezeshki, B.2    Harris, J.S.3
  • 7
    • 0023294472 scopus 로고
    • Chemical etching characteristics if InGaAs/InP and InAlAs/InP heterostructures
    • Stano A 1987 Chemical etching characteristics if InGaAs/InP and InAlAs/InP heterostructures J. Electrochem. Soc. 134 448-52
    • (1987) J. Electrochem. Soc. , vol.134 , pp. 448-452
    • Stano, A.1
  • 8
    • 0026907923 scopus 로고
    • Novel, organic acid-based etchants for InGaAlAs/InP heterostructure devices with AlAs etch-stop layers
    • Broekaert T P E and Fonstad C G 1992 Novel, organic acid-based etchants for InGaAlAs/InP heterostructure devices with AlAs etch-stop layers J. Electrochem. Soc. 193 2306-9
    • (1992) J. Electrochem. Soc. , vol.193 , pp. 2306-2309
    • Broekaert, T.P.E.1    Fonstad, C.G.2
  • 10
    • 0019579327 scopus 로고
    • Chemical etching characteristics of (001)InP
    • Adachi S and Kawaguchi H 1981 Chemical etching characteristics of (001)InP J. Electrochem. Soc. 128 1342-9
    • (1981) J. Electrochem. Soc. , vol.128 , pp. 1342-1349
    • Adachi, S.1    Kawaguchi, H.2
  • 11
    • 0026714268 scopus 로고
    • A selective etch for InAlAs over InGaAs and for different InGaAlAs quaternaries
    • Sauer N J and Chough K B 1992 A selective etch for InAlAs over InGaAs and for different InGaAlAs quaternaries J. Electrochem. Soc. 139 L10-1
    • (1992) J. Electrochem. Soc. , vol.139
    • Sauer, N.J.1    Chough, K.B.2
  • 12
    • 0028425011 scopus 로고
    • Stiction of surface micromachined structures after rinsing and drying: Model and investigation of adhesion mechanisms
    • Legtenberg R, Tilmans H A C, Elders J and Elwenspoek M 1994 Stiction of surface micromachined structures after rinsing and drying: model and investigation of adhesion mechanisms Sensors Actuators A 43 230-8
    • (1994) Sensors Actuators A , vol.43 , pp. 230-238
    • Legtenberg, R.1    Tilmans, H.A.C.2    Elders, J.3    Elwenspoek, M.4
  • 13
    • 0026818894 scopus 로고
    • Investigation of attractive forces between PECVD silicon nitride microstructures and an oxidized silicon substrate
    • Scheeper P R, Voorthuyzen J A, Olthuis W and Belgveld P 1992 Investigation of attractive forces between PECVD silicon nitride microstructures and an oxidized silicon substrate Sensors Actuators A 30 231-9
    • (1992) Sensors Actuators A , vol.30 , pp. 231-239
    • Scheeper, P.R.1    Voorthuyzen, J.A.2    Olthuis, W.3    Belgveld, P.4
  • 16
  • 21
    • 0029325709 scopus 로고
    • Effects of elevated temperature treatments in microstructure release procedures
    • Abe T, Messner W C and Reed M L 1995 Effects of elevated temperature treatments in microstructure release procedures J. Microelectromech. Syst. 4 66-75
    • (1995) J. Microelectromech. Syst. , vol.4 , pp. 66-75
    • Abe, T.1    Messner, W.C.2    Reed, M.L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.