Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells

Applied Physics Letters

Volumn 99, Issue 11, 2011, Pages

  Shang, X J ^a,b   He, J F ^a   Li, M F ^a   Zhan, F ^a   Ni, H Q ^a   Niu, Z C ^a   Pettersson, H ^c,d   Fu, Y ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c HALMSTAD UNIVERSITY   (Sweden)

^d LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION REGION; ELECTRON WAVE FUNCTIONS; GAAS; GAAS SOLAR CELLS; HOLE WAVE FUNCTIONS; INAS; INAS QUANTUM DOTS; OPTICAL TRANSITION RATES; POTENTIAL VARIATIONS;

ENERGY GAP; GALLIUM ARSENIDE; HOLE MOBILITY; INDIUM ARSENIDE; MICROCOMPUTERS; OPTICAL TRANSITIONS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; WAVE FUNCTIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 80053190661     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3638488     Document Type: Article

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