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Applied Physics A: Materials Science and Processing

Volumn 103, Issue 2, 2011, Pages 335-341

Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell

(7) Shang, X J a,b He, J F a Wang, H L a Li, M F a Zhu, Y a Niu, Z C a Fu, Y b

a INSTITUTE OF SEMICONDUCTORS (China)

b ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL SAMPLES; DEPLETION REGION; ELECTRON-HOLE RECOMBINATION; GAAS SOLAR CELLS; HOLE TRAPPING; INAS QUANTUM DOTS; MULTI-LEVEL; PHOTOCARRIER; PHOTOLUMINESCENCE SPECTRUM; POTENTIAL VARIATIONS; SATURATED CURRENT;

ELECTRIC FIELDS; ELECTRIC NETWORK ANALYSIS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS; SOLAR POWER GENERATION;

PHOTOVOLTAIC EFFECTS;

EID: 79955852769 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-6152-8 Document Type: Article

Times cited : (22)

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