Boundary conditions of continuum states in characterizing photocurrent of GaAs/AlGaAs quantum well infrared photodetector

Superlattices and Microstructures

Volumn 30, Issue 2, 2001, Pages 69-74

  Fu, Y ^a  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

Author keywords

Boundary conditions of continuum states; Quantum well photodetector

Indexed keywords

BOUNDARY CONDITIONS; CONTINUUM MECHANICS; PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL INFRARED PHOTODETECTORS (QWIP);

INFRARED DETECTORS;

EID: 0035414507     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2001.0996     Document Type: Article

References (14)

1. Quantum-well infrared photodetectors
2. GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 μm
3. A four-color quantum well infrared photodetector
4. Resonant level lifetime in GaAs/AlGaAs double-barrier structure
5. Limiting response time of double-barrier resonant tunneling structures
6. Tunneling escape of electrons from a double-barrier structure
7. Thermoexcited and photoexcited carrier transports in a GaAs/AlGaAs quantum well infrared photodetector
8. 1x As semiconductor quantum wells
9. Dependence of absorption spectrum and responsivity on the upper state position in quantum well intersubband photodetectors
10. x As quantum well structures
11. Oscillator strength of intersubband transition in n-type AlAs/GaAlAs quantum well for the normal incident absorption
12. Fine structures of photo-response spectra in quantum well infrared photodetector