Effect of RF power on an Al-doped ZnO thin film deposited by RF magnetron sputtering

Journal of the Korean Physical Society

Volumn 59, Issue 3, 2011, Pages 2349-2353

  Kim, Jong Wook ^a   Kim, Hong Bae ^a   Kyu, Deok Kim ^b  

^a Chongju University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Al atoms; Al doped ZnO; O vacancies; RF magnetron sputtering; RF power

Indexed keywords

EID: 80052884486     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.59.2349     Document Type: Article

References (25)

1. Z. Y. Wang, L. Z. Hu, J. Zhao, J. Sun and Z. J. Wang, Vacuum 78, 53 (2005).
2. K. H. Kim, K. C. Park and D. Y. Ma, J. Appl. Phys. 81, 7764 (1997).
3. F. C. M. Van de Pol, Am. Ceram. Soc. Bull. 69, 1956 (1990).
4. R. Tahar and N. Tahar, J. Mater. Sci. 40, 5285 (2005).
5. P. Nunes, E. Fortunato, P. Tonello, F. Braz Fernandes, P. Vilarinho and R. Martins, Vacuum 64, 281 (2002).
6. H. Kim, J. S. Horwitz, W. H. Kim, A. J. Makinen, Z. H. Kafafi and D. B. Chrisey, Thin Solid Films 420, 539 (2002).
7. M. S. Wang, E. J. Kim, J. S. Chung, E. W. Shin, S. H. Hahn, K. E. Lee and C. H. Park, Phys. Status Solidi A 203, 2418 (2006).
8. K. H. Kim, K. C. Park and D. Y. Ma, J. Appl. Phys. 81, 7764 (1997).
9. Y. Zhang, G. Du and B. Liu, J. Cryst. Growth 262, 456 (2004).
10. D. H. Kong, W. C. Choi, Y. C. Shin, J. H. Park and T. G. Kim, J. Korean. Phys. Soc. 48, 1214 (2006).
11. D. M. Bagnall, Y. F. Chen, M. Y. Shen, Z. Zhu, T. Goto and T. Yao, J. Cryst. Growth 184, 605 (1998).
12. G. Fang, D. Li and B. L. Yao, Vacuum 68, 363 (2003).
13. B. Y. Oh, M. C. Jeong, D. S. Kim, W. Lee and J. M. Myoung, J. Cryst. Growth 281, 475 (2005).
14. Y. M. Chung, C. S. Moon, W. S. Jung and J. G. Han, Thin Solid Films 515, 567 (2006).
15. S. Flickyngerova, K. Shtereva, V. Stenova, D. Hasko, I. Novotny, V. Tvarozek, P. Sutta and E. Vavrinsky, Appl. Surf. Sci. 254, 3643 (2008).
16. B. D. Cullity, Elements of X-ray Diffraction (Addison-Wesley Reading, MA, USA, 1978), p. 102.
17. X. Chen, W. Guan, G. Fang and X. Z. Zhao, Appl. Surf. Sci. 252, 1561 (2005).
18. B. E. Semelius, K. F. Berggren, Z. C. Jin, I. Hamberg and C. G. Granqvist, Phys. Rev. B 37, 10244 (1988).
19. W. J. Jeong, S. K. Kim and G. C. Park, Thin Solid Films 506, 180 (2006).
20. S. Y. Kuo, K. C. Liu, F. I. Lai, J. F. Yang, W. C. Chen, M. Y. Hsieh, H. I. Lin and W. T. Lin, Microelectron. Reliab. 50, 730 (2010).
21. Y. S. Jung, J. Y. Seo, D. W. Lee and D. Y. Jeon, Thin Solid Films 445, 63 (2003).
22. M. N. Islam, T. B. Ghosh, K. L. Chopra and H. N. Acharya, Thin Solid Films 280, 20 (1996).
23. C. D. Wagner, W. M. Riggs, L. E. Davis, J. F. Moulder and G. E. Muilenberg, Handbook of X-ray Photoelectron Spectroscopy (PerkinElmer Corporation, Eden Prairie, MN, USA, 1979), p. 50.
24. M. Chen, Z. L. Pei, X. Wang, C. Sun and L. S. Wen, J. Vac. Sci. Technol., A 19, 3 (2001).
25. J. Mass, P. Bhattacharya and R. S. Katiyar, Mater. Sci. Eng., B 103, 9 (2003).