352nm ultraviolet emission from high-quality crystalline AlN whiskers

Nanotechnology

Volumn 21, Issue 7, 2010, Pages

  Liu, Baodan ^a,b,c   Bando, Yoshio ^a   Wu, Aimin ^b,c   Jiang, Xin ^b,c   Dierre, Benjamin ^a   Sekiguchi, Takashi ^a   Tang, Chengchun ^a   Mitome, Masanori ^a   Golberg, Dmitri ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^c BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; HIGH QUALITY; HIGH TEMPERATURE; NITROGEN DEFICIENCY; OXYGEN CONTENT; TRANSMISSION ELECTRON MICROSCOPE; ULTRAVIOLET EMISSION;

TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINE MATERIALS;

EID: 80052809475     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/7/075708     Document Type: Article

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