Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses

Microelectronics Reliability

Volumn 50, Issue 9-11, 2010, Pages 1568-1573

  Baillot, R ^a   Deshayes, Y ^a   Bechou, L ^a   Buffeteau, T ^b   Pianet, I ^b   Armand, C ^c   Voillot, F ^c   Sorieul, S ^d   Ousten, Y ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b INSTITUT DES SCIENCES MOLÉCULAIRES   (France)

^c INSA   (France)

^d CENTRE D ETUDES NUCLÉAIRES DE BORDEAUX GRADIGNAN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED AGEING TESTS; CENTRAL WAVELENGTH; COATING DEGRADATION; CURRENT SPREADING; ELECTRO-OPTICAL; EMISSION SPECTRUMS; FAILURE SIGNATURES; FLUORESCENCE EMISSION SPECTRA; INGAN/GAN; MULTIPLE QUANTUM WELLS; OPTICAL CHARACTERISTICS; OPTICAL POWER; PHYSICS OF FAILURES; SILICONE OIL; TEMPERATURE-INSENSITIVE;

CHEMICALS; DEGRADATION; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; LIGHT EMITTING DIODES; SILICONE COATINGS; SILICONES; TESTING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80052644640     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.056     Document Type: Conference Paper

References (18)

1. S. Nakamura, T. Mukai, and M. Senoh Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes Appl Phys Lett 64 13 1994 1687 1689
2. N. Narendran, N. Maliyagoda, A. Bierman, R. Pysar, and M. Overington Characterizing white LEDs for general illumination applications SPIE Proc 3938 2000 240 248
3. S. Nakamura, and S.F. Chichibu Introduction to nitride semiconductor blue lasers and light emitting diodes 2000 CRC Press USA
4. S. Nakamura, and G. Fasol The blue laser diode 1st ed. 1999 Springer Berlin
5. D.S. Wuu, W.K. Wang, K.S. Wen, S.C. Huang, S.H. Lin, and R.H. Horng Fabrication of pyramidal patterned sapphire substrates for high-efficiency InGaN-based light emitting diodes J Electrochem Soc 153 8 2006 G765 G770
6. H. Gao, F. Yan, Y. Zhang, J. LI, Y. Zeng, and G. Wang Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs J Phys D: Appl Phys 41 11 2008 115106.1 115106.5
7. H.W. Huang, C.C. Kao, J.T. Chu, W.D. Liang, H.C. Kuo, and S.C. Wang Improvement of InGaN/GaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation Mater Chem Phys 99 2006 414 417
8. K.J. Byeon, S.Y. Hwang, and H. Lee Fabrication of two-dimensional photonic crystal patterns on GaN-based light-emitting diodes using thermally curable monomer-based nanoimprint lithography Appl Phys Lett 91 2007 091106.1 091106.3
9. H.W. Huang, C.H. Lin, J.K. Huang, K.Y. Lee, C.F. Lin, and C.C. Yu Investigation of GaN-based light emitting diodes with Nano-Hole Patterned Sapphire Substrate (NHPSS) by nano-imprint lithography Mater Sci Eng B 164 2009 76 79
10. L.C. Chen, and Y.L. Huang High reliability GaN-based light-emitting diodes with photo-enhanced wet etching Sol State Electron 48 2004 1239 1242
11. H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching Sol State Electron 52 2008 962 967
12. D.W. Kim, H.Y. Lee, G.Y. Yeom, and Y.J. Sung A study of transparent contact to vertical GaN-based light-emitting diodes J Appl Phys 98 2005 053102.1 053102.4
13. E. Vanlathem, A.W. Norris, M. Bahadur, J. DeGroot, and M. Yoshitake Novel silicone materials for LED packaging and opto-electronics devices Proc SPIE 6192 2006 619202.1 619202.8
14. N. Grassie, I.G. Macfarlane, and K.F. Francey The thermal degradation of polysiloxanes - II. Poly(methylphenylsiloxane) Eur Polym J 15 5 1979 415 422
15. L. Voisin, M. Ohtsuka, and T. Nakamura Titanium doped ITO thin films produced by sputtering method Mater Trans 51 3 2010 503 509
16. A.M. Baraka, H.A. Hamed, and H.H. Shaarawy Electrodeposition of rhodium metal on titanium substrates Anti-Corros Methods Mater 49 4 2002 277 282
17. H. Morko Handbook of nitride seminconductors and devices Electronic and optical processes in nitrides vol. 2 2008 Springer
18. Y. Deshayes, L. Béchou, and Y. Ousten Stark effects model used to highlight selective activation of failure in MQW InGaN/GaN light-emitting diodes IEEE Trans Dev Mater Reliab 10 1 2010 164 170