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Volumn 11, Issue 3, 2011, Pages 387-390

Thermal-stability enhancement of InGaP/GaAs collector-up HBTs

Author keywords

Genetic algorithm (GA); heat spreading structure (HSS); heterojunction bipolar transistors (HBTs); optimization; thermal stability

Indexed keywords

CELLULAR PHONE; EXISTING STRUCTURE; HEAT-SPREADING STRUCTURE (HSS); INGAP/GAAS; MULTIFINGERS; NOVEL DESIGN; POWER-ADDED EFFICIENCY; RF PERFORMANCE; THERMAL PARAMETERS;

EID: 80052621964     PISSN: 15304388     EISSN: 15582574     Source Type: Journal    
DOI: 10.1109/TDMR.2011.2141995     Document Type: Article
Times cited : (6)

References (10)
  • 1
    • 4043146481 scopus 로고    scopus 로고
    • Emerging SiGe HBT reliability issues for mixed-signal circuit applications
    • Jun
    • J. D. Cressler, "Emerging SiGe HBT reliability issues for mixed-signal circuit applications," IEEE Trans. Device Mater. Rel., vol. 4, no. 2, pp. 222-236, Jun. 2004.
    • (2004) IEEE Trans. Device Mater. Rel. , vol.4 , Issue.2 , pp. 222-236
    • Cressler, J.D.1
  • 2
    • 0024665142 scopus 로고
    • Thermal design studies of high-power heterojunction bipolar transistors
    • May
    • G.-B. Gao, M.-Z. Wang, X. Gui, and H. Morkoç, "Thermal design studies of high-power heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 36, no. 5, pp. 854-863, May 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , Issue.5 , pp. 854-863
    • Gao, G.-B.1    Wang, M.-Z.2    Gui, X.3    Morkoç, H.4
  • 4
    • 73349127103 scopus 로고    scopus 로고
    • Performance of high-reliability and high-linearity InGaP/GaAs HBT PAs for wireless communication
    • Jan.
    • M. C. Tu, H. Y. Ueng, and Y. C. Wang, "Performance of high-reliability and high-linearity InGaP/GaAs HBT PAs for wireless communication," IEEE Trans. Electron Devices, vol. 57, no. 1, pp. 188-194, Jan. 2010.
    • (2010) IEEE Trans. Electron Devices , vol.57 , Issue.1 , pp. 188-194
    • Tu, M.C.1    Ueng, H.Y.2    Wang, Y.C.3
  • 6
    • 33746623728 scopus 로고    scopus 로고
    • Investigation of thermal stability in multifinger GaInP/GaAs collector-up tunneling-collector HBTs with subtransistor via-hole structure
    • DOI 10.1109/TED.2006.876581
    • K. Tanaka, K. Mochizuki, C. Takubo, H. Matsumoto, T. Tanoue, and I. Ohbu, "Investigation of thermal stability in multifinger GaInP/GaAs collector-up tunneling-collector HBTs with subtransistor via-hole structure," IEEE Trans. Electron Devices, vol. 53, no. 8, pp. 1759-1767, Aug. 2006. (Pubitemid 44145079)
    • (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.8 , pp. 1759-1767
    • Tanaka, K.1    Mochizuki, K.2    Takubo, C.3    Matsumoto, H.4    Tanoue, T.5    Ohbu, I.6
  • 10
    • 1342308181 scopus 로고    scopus 로고
    • Extraction of material parameters in film bulk acoustic resonator (FBAR) using genetic algorithm
    • Feb
    • J. Lee, J. Jung, J. I. Park, and H. Kim, "Extraction of material parameters in film bulk acoustic resonator (FBAR) using genetic algorithm," IEEE Electron Device Lett., vol. 25, no. 2, pp. 67-69, Feb. 2004.
    • (2004) IEEE Electron Device Lett. , vol.25 , Issue.2 , pp. 67-69
    • Lee, J.1    Jung, J.2    Park, J.I.3    Kim, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.