High-performance collector-up InGaP/GaAs heterojunction bipolar transistor with Schottky contact

Electronics Letters

Volumn 35, Issue 8, 1999, Pages 670-672

  Girardot, A ^a   Henkel, A ^a,c   Delage, S L ^a   DiForte Poisson, M A ^a   Chartier, E ^a   Floriot, D ^a   Cassette, S ^a   Rolland, P A ^b  

^a THALES   (France)

^b INSTITUT D ELECTRONIQUE   (France)

^c ROBERT BOSCH GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; SEMICONDUCTING BORON; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

SCHOTTKY CONTACT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032657001     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990460     Document Type: Article

References (7)

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7. LURYI, S.: 'How to make an ideal HBT and sell it too', IEEE Trans., 1994, ED-41, (12), pp. 2241-2247