Investigation of thermal stability in multifinger GaInP/GaAs collector-up tunneling-collector HBTs with subtransistor via-hole structure

IEEE Transactions on Electron Devices

Volumn 53, Issue 8, 2006, Pages 1759-1767

  Tanaka, Ken'ichi ^a   Mochizuki, Kazuhiro ^a   Takubo, Chisaki ^a   Matsumoto, Hidetoshi ^a   Tanoue, Tomonori ^a   Ohbu, Isao ^a,b  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Ballast resistor; Bipolar transistors (HBT); Gallium materials devices; Heterojunction; Thermal stability; Via hole structure

Indexed keywords

ELECTRON TUNNELING; HEAT RESISTANCE; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

BALLAST RESISTOR; GALLIUM MATERIALS/DEVICES; VIA-HOLE STRUCTURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33746623728     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.876581     Document Type: Article

References (11)

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