Thermal management of power HBT in pulsed operating mode

35th European Microwave Conference 2005 - Conference Proceedings

Volumn 3, Issue , 2005, Pages 1487-1490

  Floriot, D ^a   Jacquet, J C ^a   Chartier, E ^a   Coupat, J M ^b   Eudeline, P ^b   Auxemery, P ^c   Blanck, H ^c  

^a ALCATEL THALES III V LAB   (France)

^b Thales Airborne Defense   (France)

^c United Monolithic Semiconductor   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; HEAT RESISTANCE; RADAR; THERMAL VARIABLES MEASUREMENT;

THERMAL CAPACITANCE; THERMAL IMPEDANCE; THERMAL MANAGEMENT; THERMAL SHUNT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33847145491     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMC.2005.1610232     Document Type: Conference Paper

References (2)

1. H. Blanck et al. "Industrial GaInP/GaAs Power HBT Process", GaAs2000 Conference - pp.113-11
2. I "High Power and High Efficiency Compact S-Band HBT power chips with Gold or Diamond Thermal Heat Spreaders"