SCOPUS 정보 검색 플랫폼

Nanoscale

Volumn 3, Issue 9, 2011, Pages 3620-3622

Site-selected doping in silicon nanowires by an external electric field

(3) Wu, Fang a Kan, Erjun b Wu, Xiaojun c

a NANJING FORESTRY UNIVERSITY (China)

b NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPED; EXTERNAL ELECTRIC FIELD; FIRST-PRINCIPLES CALCULATION; KEY CHARACTERISTICS; P-N JUNCTION; SEMICONDUCTIVE; SILICON NANOWIRES;

CALCULATIONS; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRIC PROPERTIES; NANOWIRES; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

ELECTRIC WIRE;

NANOWIRE; SILICON;

ARTICLE; CHEMISTRY; ELECTRICITY; SEMICONDUCTOR;

ELECTRICITY; NANOWIRES; SEMICONDUCTORS; SILICON;

EID: 80052555211 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c1nr10569h Document Type: Article

Times cited : (3)

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