Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions

Applied Physics Letters

Volumn 99, Issue 9, 2011, Pages

  Fung, Wayne Y ^a   Chen, Lin ^a   Lu, Wei ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; CORE/SHELL; DEVICE APPLICATION; HIGH-PEAK CURRENTS; LOW DEFECT DENSITIES; NEGATIVE DIFFERENTIAL RESISTANCES; PEAK CURRENTS; PEAK TO VALLEY CURRENT RATIO; REVERSE BIAS; ROOM TEMPERATURE; SI SUBSTRATES; SI-GE HETEROJUNCTION; SI-GE NANOWIRES; TUNNELING CURRENT;

DEFECT DENSITY; DIODES; FIELD EFFECT TRANSISTORS; GERMANIUM; HETEROJUNCTIONS; NANOWIRES; SILICON; SILICON ALLOYS; TUNNEL DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80052551326     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3633347     Document Type: Article

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