Effects of barrier composition and electroplating chemistry on adhesion and voiding in copper/dielectric diffusion barrier films

Journal of Applied Physics

Volumn 110, Issue 4, 2011, Pages

  Birringer, Ryan P ^a   Shaviv, Roey ^b   Geiss, Roy H ^c   Read, David T ^c   Dauskardt, Reinhold H ^a  

^a Stanford University   (United States)

^b NOVELLUS SYSTEMS INC   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER COMPOSITIONS; BARRIER MATERIAL; CU ELECTROPLATING; CU FILMS; DIFFUSION BARRIER FILMS; DUAL LAYER; FILM ADHESION; FOUR-POINT BEND; INTERFACE ADHESION; N-DOPED; OXYGEN CONTENT; PLATING CHEMISTRY;

ADHESION; CHLORINE; COPPER; ELECTROPLATING; METALLIC FILMS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; SILICON NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

DIFFUSION BARRIERS;

EID: 80052412850     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3624659     Document Type: Article

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