Effect of oxygen at the Cu-SiCxNy interface on electromigration performance of interconnect structures

Thin Solid Films

Volumn 513, Issue 1-2, 2006, Pages 295-299

  Liniger, E G ^a   Dziobkowski, C ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COPPER COMPOUNDS; ELECTROMIGRATION; OXYGEN;

MASS TRANSPORT; OXYGEN CONCENTRATION; VOID GROWTH RATE;

INTERFACES (MATERIALS);

EID: 33745267214     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.01.075     Document Type: Article

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