Inductively coupled plasma etching of graded-refractive-index layers of TiO2 and SiO2 using an ITO hard mask

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 5, 2011, Pages

  Noemaun, Ahmed N ^a   Mont, Frank W ^a   Cho, Jaehee ^a   Schubert, E Fred ^a   Kim, Gi Bum ^b   Sone, Cheolsoo ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ENVIRONMENT; DIELECTRIC LAYER; DRY-ETCH; ETCH CHEMISTRY; ETCH RATES; HARD MASKS; HIGH SELECTIVITY; ICP ETCHING; ICP-RIE; SI SUBSTRATES; TIO; TRANSPARENT DIELECTRIC LAYERS;

CHLORINE; FLUORINE; INDUCTIVELY COUPLED PLASMA; SILICON COMPOUNDS; TITANIUM DIOXIDE;

REACTIVE ION ETCHING;

EID: 80052392958     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3620494     Document Type: Article

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